Graduate Thesis Or Dissertation

 

Hot electron effects in N-channel MOSFET's Pubblico Deposited

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/tt44pr09x

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  • The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation is a function of the AC average substrate current under the various AC stress conditions but not a function of frequency or waveforms or different measurement configurations. An empirical model is constructed for circuit applications. It is verified that the self-limiting in drain current is due to the thermal re-emission of a trapped-hot-electron in the oxide. Results show that self-heating during AC stress releases trapped electrons, which in turn limits the maximum amount of drain current degradation. Moreover, tunneling to and from traps model is employed to visualize the internal mechanism of thermal recovery of electrons under different bias conditions. Although the LDD device structure can reduce the hot electron effect, various processing technologies can also affect the device reliability. A carbon doped LDD device with the first and the second level metal and passivation layer but without any final anneal shows that a significant reduction in the shifts of the threshold voltage of MOSFETs with time can be achieved. However, the long-term reliability projection of nMOSFETs based on DC stress tests alone is shown to be overly pessimistic.
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  • File scanned at 300 ppi (Monochrome) using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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