An eraseable MOS read-only memory Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/vq27zr84w

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  • A non-volatile electrically alterable read-only memory using an MOS field effect transistor with a threshold voltage which depended upon the position of ionic charges for its memory was fabricated. The conventional silicon dioxide layer was replaced by a composite layer consisting of thermal silicon dioxide, electron beam evaporated aluminum oxide, and pyrolytically deposited silicon dioxide which substantially reduced the migration rate of the ions. The rate of drift of the ions was found to be dependent upon the polarity of the electric field. The ions had greater mobility under a negative applied bias. It was also shown that for the same electric fields the activation energy was higher for negative electric fields, and that the activation energy decreases with increasing electric fields. The migration rate was also found to be an exponential function of applied electric field.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-12-02T16:42:30Z (GMT) No. of bitstreams: 1 JohnsonNormanL1974.pdf: 447049 bytes, checksum: eb23a107267874b5f1b1a4f0318d134d (MD5)
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  • description.provenance : Made available in DSpace on 2013-12-03T21:32:26Z (GMT). No. of bitstreams: 1 JohnsonNormanL1974.pdf: 447049 bytes, checksum: eb23a107267874b5f1b1a4f0318d134d (MD5) Previous issue date: 1973-11-29

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