Graduate Thesis Or Dissertation
 

Electro-optic characterization of SrS-based alternating current thin-film electroluminescent devices

Öffentlich Deposited

Herunterladbarer Inhalt

PDF Herunterladen
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/wh246v660

Descriptions

Attribute NameValues
Creator
Abstract
  • Two methods of electro-optically characterizing alternating-current thin-film electroluminescent (ACTFEL) devices are investigated: photo-induced transferred charge (PIQ) and luminescence (PIL), and subthreshold voltage-induced transferred charge (VIQ) techniques. Both techniques provide information related to traps within the phosphor layer. PIQ/PIL experiments monitor the transport of electrons and holes across the phosphor layer which are photo-injected by a UV laser pulse. VIQ experiments monitor the optical reset of traps ionized by bipolar subthreshold voltage pulses. PIQ/PIL experiments are performed on three different SrS ACTFEL devices: ALE-deposited SrS:Ce, sputter-deposited SrS:Cu, and undoped MOCVD-deposited SrS. From the PIQ/PIL experiments, two distinct electron thresholds in the luminescent impurity doped samples at ~0.8 (weak threshold) and ~1.2 MV/cm (strong threshold) are observed. These thresholds are independent of the phosphor thickness, indicating that they arise from a bulk property of the phosphor. The ~0.8 MV/cm weak threshold is attributed to field emission of relatively shallow (~0.6 eV) electron-emitting bulk traps (e.g. cerium or oxygen for SrS:Ce; a sulfur vacancy or oxygen for SrS:Cu). The ~1.2 MV/cm strong threshold is ascribed to the onset of trap-to-band impact ionization. In contrast to electron transport, PIQ/PIL studies reveal no hole transport in SrS doped with luminescent impurities, although hole transport is observed for an undoped SrS ACTFEL device. The lack of hole transport is attributed to the efficiency of hole capture in SrS doped with luminescent impurities. VIQ experiments are performed on the same SrS ACTFEL devices. VIQ trap energy depths are estimated as ~0.1 eV for SrS:Ce; ~0.9 eV for SrS:Cu (with a capture cross-section of ,~10⁻¹³cm²), and ~0.6 eV for undoped SrS. Tenative atomic identification of traps responsible for these VIQ trends are: chlorine or a Ce shallow donor state for SrS:Ce, a sulfur vacancy for SrS:Cu, and a sulfur vacancy or an oxygen isoelectronic trap for undoped SrS.
License
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Academic Affiliation
Non-Academic Affiliation
Subject
Urheberrechts-Erklärung
Publisher
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces

Beziehungen

Parents:

This work has no parents.

In Collection:

Artikel

Miniaturansicht Titel Hochladedatum Sichtbarkeit Aktionen
file details NeversCoreyA2000.pdf 2017-08-09 Öffentlich Herunterladen