Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/ws859j31v

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  • The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits since gain and propagation delay are strong functions of g[subscript ds]. An analytical model which incorporates frequency and temperature dependent parameters has been developed and gives satisfactory results as compared with experimental data.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-06-28T23:35:28Z (GMT) No. of bitstreams: 1 LamStevenCF1988.pdf: 410871 bytes, checksum: 725641113e99621d135dafbe58679c3d (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-06-10T19:47:56Z (GMT) No. of bitstreams: 1 LamStevenCF1988.pdf: 410871 bytes, checksum: 725641113e99621d135dafbe58679c3d (MD5)
  • description.provenance : Made available in DSpace on 2013-06-28T23:35:28Z (GMT). No. of bitstreams: 1 LamStevenCF1988.pdf: 410871 bytes, checksum: 725641113e99621d135dafbe58679c3d (MD5) Previous issue date: 1988-04-29
  • description.provenance : Submitted by Katy Davis (kdscannerosu@gmail.com) on 2013-06-03T22:24:37Z No. of bitstreams: 1 LamStevenCF1988.pdf: 410871 bytes, checksum: 725641113e99621d135dafbe58679c3d (MD5)

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