Graduate Thesis Or Dissertation
 

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Público Deposited

Contenido Descargable

Descargar PDF
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/ws859j31v

Descriptions

Attribute NameValues
Creator
Abstract
  • The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits since gain and propagation delay are strong functions of g[subscript ds]. An analytical model which incorporates frequency and temperature dependent parameters has been developed and gives satisfactory results as compared with experimental data.
Resource Type
Fecha Disponible
Fecha de Emisión
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Academic Affiliation
Non-Academic Affiliation
Subject
Declaración de derechos
Publisher
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces

Relaciones

Parents:

This work has no parents.

En Collection:

Elementos

Miniatura Título Fecha de subida Visibilidad Acciones
file details LamStevenCF1988.pdf 2017-08-09 Público Descargar