Design, fabrication and characterization of complementary heterojunction field effect transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/x633f418k

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  • Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor (CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate recess process. Several schemes were used in an attempt to improve the performance of the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping. Circuits and individual n- and p- channel devices were fabricated on a stacked delta-doped complementary structure. The circuits failed to perform due to complications with adjusting the threshold voltage. However, Individual devices were successfully characterized, p-channel devices with extrinsic transconductances up to 14 mS/mm, n-channel devices with extrinsic transconductances up to 120 mS/mm and a unity power gain bandwidth of 5.5 GHz.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2012-10-24T21:45:53Z (GMT) No. of bitstreams: 1 McMahonTerryE1995.pdf: 5367428 bytes, checksum: 9448b9e379343d0cc3357cd1a927fdfd (MD5)
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