Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/xs55mg584

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  • This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency 1/f noise are mobility fluctuations and number fluctuations. Our 1/f noise measurements in p-MOSFET's, bipolar transistors, and lateral pnp bipolar transistors were done at frequencies of 1 Hz and 1 KHz respectively by both the automatic and analog methods. The measurement results suggest that the number fluctuation and mobility fluctuation models are applied for short channel and long channel p-MOSFET's in the saturation region respectively. Simulations have been done using PSPICE, with noise level NLEV=0 and device model level 3 for long channel p-MOSFET's; with noise level NLEV=2 and device model level 6 for short channel p-MOSFET's. Theoretical considerations as well as experimental results show that it is possible to take advantage of MOSFET and bipolar devices for low noise integrated circuit applications. Research on low frequency 1/f noise in the different semiconductor devices is very important to determine the best semiconductor structure and best noise model for different devices. This is an especially important consideration in the development of the integrated circuits in high-density chip area, low voltage supply, low power consumption and low noise applications.
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