Linear metal-oxide-semiconductor integrated circuits

Graduate Thesis Or Dissertation

Public Deposited

Citeable URL: https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/z890rw81t

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Attribute Name	Values
Creator	Chalfan, John Lawrence
Abstract	This paper is a study of various linear Metal-Oxide- Semiconductor integrated circuit configurations with the goal of improving their operation. The operation of MOS devices is covered including their use as load devices to replace diffused resistors. The advantages and disadvantages of the resulting circuits as well as possible physical layouts are discussed. The use of a current-source load device is suggested to improve the voltage gain and output voltage swing. Experimental results show that circuits with current-source loads have at least a ten times advantage in voltage gain and an output voltage swing nearly equal to the supply voltage.
Resource Type	Masters Thesis
Date Available	2014-03-13T20:36:29+00:00
Date Issued	1968-11-08
Degree Level	Master's
Degree Name	Master of Science (M.S.)
Degree Field	Electrical and Electronics Engineering
Degree Grantor	Oregon State University
Commencement Year	1969
Advisor	Looney, James C.
Academic Affiliation	Electrical and Electronics Engineering
Non-Academic Affiliation	Oregon State University. Graduate School
Subject	Electronic circuits
Rights Statement	Copyright Not Evaluated
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Digitization Specifications	File scanned at 300 ppi using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
Replaces	http://hdl.handle.net/1957/46610

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