Linear metal-oxide-semiconductor integrated circuits Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/z890rw81t

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  • This paper is a study of various linear Metal-Oxide- Semiconductor integrated circuit configurations with the goal of improving their operation. The operation of MOS devices is covered including their use as load devices to replace diffused resistors. The advantages and disadvantages of the resulting circuits as well as possible physical layouts are discussed. The use of a current-source load device is suggested to improve the voltage gain and output voltage swing. Experimental results show that circuits with current-source loads have at least a ten times advantage in voltage gain and an output voltage swing nearly equal to the supply voltage.
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  • File scanned at 300 ppi using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-03-13T20:36:29Z (GMT) No. of bitstreams: 1 ChalfanJohn1969.pdf: 901767 bytes, checksum: 7ed49feeabddfccfbb0ab1380b110117 (MD5)
  • description.provenance : Submitted by Georgeann Booth (gbscannerosu@gmail.com) on 2014-03-11T00:30:40Z No. of bitstreams: 1 ChalfanJohn1969.pdf: 901767 bytes, checksum: 7ed49feeabddfccfbb0ab1380b110117 (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-03-11T14:08:20Z (GMT) No. of bitstreams: 1 ChalfanJohn1969.pdf: 901767 bytes, checksum: 7ed49feeabddfccfbb0ab1380b110117 (MD5)
  • description.provenance : Made available in DSpace on 2014-03-13T20:36:29Z (GMT). No. of bitstreams: 1 ChalfanJohn1969.pdf: 901767 bytes, checksum: 7ed49feeabddfccfbb0ab1380b110117 (MD5) Previous issue date: 1968-11-08

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