Honors College Thesis

 

Thin-Film Dielectric Structure of Spin-Coated ZrO2 from Aqueous Inorganic Solution Public

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  • An inorganic aqueous precursor for the deposition of ZrO2 thin films via spincoating was developed. Hydrolysis and condensation chemistries of ZrOCl₂·8H₂O were used as the principal reactions to guide the synthesis. Refractive index, n, for a film annealed at 300 °C at 550 nm was measured to be n=1.97 by SE. Thin-films remained amorphous until about 500 °C with slight signs of monoclinic phase at 400 °C, as determined by XRD. FT-IR analysis of thin films showed remaining hydration until 400 °C annealing temperatures. A second order mathematical model was also developed for the metal oxide thickness as a function of precursor concentration with a minimum experimental thickness for this deposition system of 1.02(8) nm.
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