I-V Characteristics of Al/HfO2/TaN RRAM Devices

Honors College Thesis

Public Deposited

Download PDF

Citeable URL: https://ir.library.oregonstate.edu/concern/honors_college_theses/6m311r13p

Descriptions

Attribute Name	Values
Alternative Title	I-V Characteristics of Al/HfO₂/TaN RRAM Devices
Creator	Valdivia, Arturo H.
Abstract	The memristor is a resistive switching random access memory (RRAM) with a basic metal/insulator/metal (MIM) structure. These nano devices are nonvolatile, have a conceptually simple crossbar device structure, are power efficient and have the capability of switching between high and low resistance states in nanoseconds making them promising to replace current forms of memory storage. In this thesis Al/HfO₂/TaN RRAM devices were synthesized and bipolar switching was observed. I-V curves for devices of different areas were obtained and characteristics with regards to the set and reset voltages were attributed to literature trends for future production of stable devices.
License	All rights reserved
Resource Type	Honors College Thesis
Date Available	2013-07-10T00:04:37+00:00
Date Issued	2013-06-05
Degree Level	Bachelor's
Degree Name	Honors Bachelor of Science (H.B.S.)
Degree Field	Chemical Engineering
Degree Grantor	Oregon State University
Commencement Year	2014
Advisor	Conley, John F., Jr.
Non-Academic Affiliation	Oregon State University. Honors College
Rights Statement	In Copyright
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Replaces	http://hdl.handle.net/1957/40180

Parents:

This work has no parents.

In Collection:

Thumbnail	Title	Date Uploaded	Visibility	Actions
	ArturoValdiviaHonorsThesis.pdf	2017-07-29	Public	Download