- The purpose of this research is to provide a simple fabrication method for zinc oxide and antimony sulfide based thin film solar cells. Both a ZnO nanorod electron conducting structure and a stibnite absorber show promise in a solar cell. Initial attempts at using only ZnO and Sb2S3, however, resulted in destruction of the ZnO. An intermediary ZnS layer was included to mitigate this issue. Cells were created by chemical bath deposition (CBD) of ZnO nanorods, chemical treatment to partially convert the ZnO to ZnS, CBD deposition of amorphous Sb2S3, and crystallization by annealing under N2. The films were analyzed by SEM, EDX, UV-Vis, and dark current-voltage response. SEM shows ZnO nanorods 340 nm thick, a thin Zn(O,S) layer, and 240 nm Sb2S3 layer. UV-Vis shows near-absolute absorption at 300-400 nm, with absorptivity decreasing from 99.9% to 90% across wavelengths of 400-800 nm. Tauc plots show band gaps of 3.2, 3.6, and 1.6 eV for ZnO, ZnS, and Sb2S3, respectively, which correspond to literature. Dark IV analysis shows a thin film diode response. Future work will entail improvements in film uniformity, process repeatability, and additional SEM analysis. Further research is also proposed to measure device efficiency, needing only the further deposition of P3HT, PEDOT:PSS, and a conductive metallic layer.