Zinc sulfide thin films on silicon wafers were analyzed for layer thickness, refractive index, and absorption using reflection spectroscopy (RS), spectroscopic ellipsometry (SE), and modeling programs. RS and refractive index values from literature were used to model film thickness based on reflection and the SCOUT modeling program was used to analyze the reflectance data and generate model RS data. SE was used to measure film thickness and complex index of refraction and a VASE32 program was used to model the layers of the thin film and generate model SE data. Goals include comparing SE and RS as possible non-destructive analysis tools and developing the most efficient SCOUT interface for analyzing available optical data.
Both RS and SE data analysis have the ability to measure the thickness d and complex refractive index n and κ of ZnS given the complex refractive index of the silicon wafer. The SCOUT optical modeling software generates a graphical user interface and can analyze RS data and can be configured to analyze SE data as well.