I-V Characteristics of Al/HfO2/TaN RRAM Devices Public Deposited

http://ir.library.oregonstate.edu/concern/undergraduate_thesis_or_projects/6m311r13p

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  • I-V Characteristics of Al/HfO₂/TaN RRAM Devices
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  • The memristor is a resistive switching random access memory (RRAM) with a basic metal/insulator/metal (MIM) structure. These nano devices are nonvolatile, have a conceptually simple crossbar device structure, are power efficient and have the capability of switching between high and low resistance states in nanoseconds making them promising to replace current forms of memory storage. In this thesis Al/HfO₂/TaN RRAM devices were synthesized and bipolar switching was observed. I-V curves for devices of different areas were obtained and characteristics with regards to the set and reset voltages were attributed to literature trends for future production of stable devices.
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