Characterization of BaCuSF Thin Films Grown in Excess Copper, by Pulsed Laser Deposition Public Deposited

http://ir.library.oregonstate.edu/concern/undergraduate_thesis_or_projects/h415pc63k

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  • Thin films of the p-type semiconductor, barium copper sulfide fluoride (BaCuSF) were deposited using pulsed laser deposition. Similar p-type conductivity in Cu2O is caused by copper vacancies. Addition of copper dopant is proposed as a method for filling the copper vacancies in BaCuSF. The films are characterized to determine quality using x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption, Seebeck, and resistivity measurements. The optimal deposition parameters with no added copper are: substrate temperature of 525 ºC, argon gas pressure of 10-5 Torr, target-substrate distance of 2 inches, and a pulse repetition rate of 3 Hz. Copper is added to films produced at optimal deposition parameters at pulse ratios of 1000:1000 to 12:1000. Resistivity measurements are compared with theoretical copper content of the film to determine the success of the dopant. The film produced with a pulse ratio of 40:1000 has the closest to stoichiometric copper as well as the highest resistivity. This corresponds well with the filling of copper vacancies.
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  • description.provenance : Submitted by Heather Boren (heather.boren@oregonstate.edu) on 2009-07-28T17:27:50Z No. of bitstreams: 1 Evans Honors Thesis.pdf: 7729100 bytes, checksum: 090a15717e8b96ba75e7908a5f479080 (MD5)
  • description.provenance : Made available in DSpace on 2009-07-28T17:30:33Z (GMT). No. of bitstreams: 1 Evans Honors Thesis.pdf: 7729100 bytes, checksum: 090a15717e8b96ba75e7908a5f479080 (MD5)

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