Honors College Thesis
 

Lanthanum Sulfide Thin Film Deposition via Chemical Nanocluster Deposition

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  • Lanthanum sulfide film was deposited on silicon dioxide substrate by pumping aqueous LaCl3∙7H2O and Na2S∙9H2O solutions into a T-mixer. After mixing, residence time was manipulated to adjust lanthanum sulfide deposition rate. Lanthanum sulfide films were created on silicon dioxide substrate at room temperature, 60 °C, and at 100 °C. Lanthanum sulfide films were analyzed for particle size and crystalline structure using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. The film material bandgap was characterized to be about 3.5 eV from UV-Vis analysis. TEM results indicate that the film grown has both polycrystalline and amorphous regions. Particle size was determined to range from ~1-50 nm after 20 seconds of deposition. The growth profile for lanthanum sulfide deposition follows a linear trend at room temperature.
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