Deposition and Characterization of Pb(Zr₁₋ₓTiₓ)O₃ Thin Films on IGZO and ZTO Substrates for Microelectromechanical Systems Public Deposited

http://ir.library.oregonstate.edu/concern/undergraduate_thesis_or_projects/z603r2816

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  • Deposition and Characterization of Pb(Zr1-xTix)O3 Thin Films on IGZO and ZTO Substrates for Microelectromechanical Systems
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  • Pb(Zr₁₋ₓTiₓ)O₃ (PZT) is a common piezoelectric and ferroelectric thin film material with a wide variety of applications, including ferroelectric random access memories, novel thin film transistors, and microelectromechanical systems (MEMS). The most common substrate for PZT in all of these areas has been platinum-coated silicon. Alternative substrates are desired for development of new device architectures. In-Ga-Zn-O (IGZO) and Zn-Sn-O (ZTO) substrates represent two alternative substrates of interest. This work seeks to systematically synthesize and characterize chemical solution deposited PZT on IGZO/SiO₂/Si and ZTO/SiO₂/Si substrates. PZT precursors were synthesized via inverted mixing order chemistry and deposited on IGZO and ZTO substrates which had varying thermal pre-treatments. Interdigitated electrodes were fabricated to allow measurement of film capacitance and dielectric loss in the absence of a platinum bottom electrode. Dielectric constants were calculated from measured capacitance following existing models. Largely phase pure PZT films were fabricated by varying crystallization temperatures and times from 5 to 10 minutes and 750°C to 850°C. Electrical measurements yielded calculated dielectric constants of 300-1100 with variation dependent on the electrode design. Dielectric loss ranged from 4% to 12%. Hysteresis measurements generated well-saturated hysteresis loops with remanent charges from 0.0178 μC to 0.0386 μC and coercive voltages from 23.6 V to 4.81 V.
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