Hot electron luminescence in ZnS alternating-current thin-film electroluminescent devices

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/3f462671s

Descriptions

Attribute Name	Values
Creator	Douglas, A. A. Wager, J. F. Morton, D. C. Koh, J. B. Hogh, C. P.
Abstract	Hot electron luminescence experiments are performed on ZnS alternating-current thin-film electroluminescent (ACTFEL) devices in order to determine the extent to which the electron distribution is heated. The luminescence spectrum is found to be broad and essentially featureless up to a high energy cutoff of approximately 3.7 eV, which is determined by optical absorption within the ZnS. This result indicates that under normal operating conditions in a ZnS ACTFEL device, a significant fraction of the electrons transported across the phosphor possess energies equal to or in excess of the ZnS band gap.
Resource Type	Article
DOI	https://doi.org/10.1063/1.110350
Date Available	2010-01-27T22:36:15+00:00
Date Issued	1993-07-12
Citation	Douglas, A. A., Wager, J. F., Morton, D. C., Koh, J. B., & Hogh, C. P. (1993). Hot electron luminescence in ZnS alternating-current thin-film electroluminescent devices [Electronic version]. Applied Physics Letters, 63(2), 231-233.
Journal Title	Applied Physics Letters
Journal Volume	63
Rights Statement	Copyright Not Evaluated
Publisher	The American Insitute of Physics
Language	English [eng]
Replaces	http://hdl.handle.net/1957/14133