Structure of the InP/SiO₂ interface

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/sn009z993

Descriptions

Attribute Name	Values
Creator	Liliental, Z. Wager, J. F. Goodnick, S. M.
Abstract	InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 °C is shown to consist of two separate layers, an inner one of 30–70 Å thickness and probably composition InPO₄, and an outer one of 60-Å thickness and probably composition In₂O₃. Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Institute of Physics (http://www.aip.org/).
Resource Type	Article
DOI	https://doi.org/10.1063/1.95877
Date Available	2010-02-01T15:11:44+00:00
Date Issued	1995-03-01
Citation	Liliental, Z., Krivanek, O. L., Wager, J. F., & Goodnick, S. M. (1985). Structure of the InP/SiO₂ interface [Electronic version]. Applied Physics Letters, 46(9), 889-891.
Journal Title	Applied Physics Letters
Journal Volume	46
Journal Issue/Number	9
Rights Statement	Copyright Not Evaluated
Publisher	The American Institute of Physics
Language	English [eng]
Replaces	http://hdl.handle.net/1957/14184