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Ultrafast Nonlinear Optical Effects in Semiconductor Quantum Wells Resonantly Driven by Strong Few-Cycle Terahertz Pulses

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dc.creator Tomaino, J. L.
dc.creator Jameson, A. D.
dc.creator Lee, Yun-Shik
dc.creator Prineas, J. P.
dc.creator Steiner, J. T.
dc.creator Kira, M.
dc.creator Koch, S. W.
dc.date.accessioned 2010-07-15T18:48:56Z
dc.date.available 2010-07-15T18:48:56Z
dc.date.issued 2010
dc.identifier.citation Tomaino JL et al. Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong fewcycle terahertz pulses. Solid State Electron (2010), doi:10.1016/j.sse.2010.05.020 en
dc.identifier.uri http://hdl.handle.net/1957/16735
dc.description Article appears in Solid-State Electronics (http://www.elsevier.com/wps/find/journaldescription.cws_home/103/description#description) and is copyrighted by Elsevier. en
dc.description.abstract Intraexciton transitions in semiconductor quantum wells are modulated by strong and tunable few-cycle terahertz pulses. Time-resolved terahertz-pump and optical-probe measurements demonstrate that the 1s heavy-hole and light-hole exciton resonances undergo large-amplitude spectral modulations when the terahertz radiation is tuned near the 1s–2p intraexciton transition. The strong nonlinear optical transients exhibit the characteristics of Rabi sidebands. The spectral features also reveal the dephasing properties of the optically dark 2p states. A microscopic theory shows that the 2p-dephasing rate is three times that of the 1s-state. The ultrafast nonlinear optical effects and their quantum nature suggest promising applications to ultrahigh-speed optical signal processing and quantum information processing in the THz region. en
dc.language.iso en_US en
dc.publisher Elsevier en
dc.relation.ispartofseries Solid-State Electronics en
dc.relation.ispartofseries (2010) en
dc.subject Few-cycle terahertz pulse en
dc.subject Nonlinear terahertz effect en
dc.subject Quantum well en
dc.subject Exciton en
dc.subject Rabi sideband en
dc.title Ultrafast Nonlinear Optical Effects in Semiconductor Quantum Wells Resonantly Driven by Strong Few-Cycle Terahertz Pulses en
dc.type Article en
dc.identifier.doi 10.1016/j.sse.2010.05.020


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