Graduate Thesis Or Dissertation
 

Zinc Tin Oxide Thin Films by Pulsed Laser Deposition for use in Transparent Thin-Film Transistors

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  • Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are investigated as a channel layers for transparent thin-film transistors (TTFTs). Films are deposited on glass for characterization, and transistor channel layers are deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass substrates (ATO/ITO/glass) to produce TTFTs. UV-visible spectroscopy on films gives average T/( 1-R) values around 80% at 500 nm and optical bandgaps between 3.03 and 3.7 eV. EPMA and RBS analyses show that the films consistently contain about 15% less zinc than the targets from which they are deposited. Van der Pauw measurements yield a minimum resistivity of 2.35 Ω-cm, and a maximum Hall mobility of 10.4 cm²-V⁻¹-s⁻¹. Annealing the TTFTs in air at 600 °C for 30 minutes improves performance. XRD analysis shows this anneal changes the amorphous ZTO to a mixture of amorphous ZTO and crystalline ZnO. The highest achieved mobilities for TTFTs produced are μₐᵥg = 6.63 cm²-V⁻¹-s⁻¹ and μᵢₙc = 8.35 cm²-V⁻¹-s⁻¹ with drain current on-to-off ratios in the 10⁵ range.
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