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Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

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dc.contributor.advisor Wager, John F.
dc.creator Hoshino, Ken
dc.date.accessioned 2012-06-22T22:04:11Z
dc.date.available 2012-06-22T22:04:11Z
dc.date.copyright 2012-06-11
dc.date.issued 2012-06-11
dc.identifier.uri http://hdl.handle.net/1957/30110
dc.description Graduation date: 2012 en_US
dc.description.abstract Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O₂ is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature. en_US
dc.language.iso en_US en_US
dc.subject IGZO en_US
dc.subject ZTO en_US
dc.subject TFT en_US
dc.subject Stability en_US
dc.subject Indium gallium zinc oxide en_US
dc.subject zinc tin oxide en_US
dc.subject ZTSO en_US
dc.subject zinc tin silicon oxide en_US
dc.subject TFT structure en_US
dc.subject wet oxidation en_US
dc.subject dry oxidation en_US
dc.subject water contamination en_US
dc.subject NBIS en_US
dc.subject negative bias illumination stress en_US
dc.subject.lcsh Thin film transistors en_US
dc.subject.lcsh Zinc tin oxide en_US
dc.subject.lcsh Indium compounds
dc.subject.lcsh Gallium compounds
dc.title Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs en_US
dc.type Thesis/Dissertation en_US
dc.degree.name Doctor of Philosophy (Ph. D.) in Electrical and Computer Engineering en_US
dc.degree.level Doctoral en_US
dc.degree.discipline Engineering en_US
dc.degree.grantor Oregon State University en_US
dc.contributor.committeemember Keszler, Douglas A.
dc.contributor.committeemember Conley, John F. Jr.
dc.contributor.committeemember Jander, Albrecht
dc.contributor.committeemember Hackleman, David
dc.description.peerreview no en_us

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