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Thermal conductivity of amorphous thin-film Al-P-O on silicon

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https://ir.library.oregonstate.edu/concern/articles/2v23vw18j

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Abstract
  • The thermal conductivity, measured by the 3ω method, of amorphous films of Al₂P₁.₂O₆ (AlPO) deposited on Si substrates by an all-aqueous spin-coating technique is 0.93(3) Wm⁻¹K⁻¹. The thermal conductivity of a degenerately doped n-Si substrate is 85(5) Wm⁻¹K⁻¹ and of a more lightly doped p-Si substrate is 139(7) Wm⁻¹K⁻¹. The AlPO thermal conductivity is independent of film thickness in the range 45 – 200 nm. The total thermal resistance is dominated by the film contribution for film thicknesses above 50 nm, and for smaller thicknesses, interface contributions become significant.
  • Keywords: 3-omega method, Thermal conductivity, Interface resistance, AlPO, Thin-film, Amorphous dielectric, Solution processes
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  • Wiedle, R. A., Warner, M., Tate, J., Plassmeyer, P. N., & Page, C. J. (2013). Thermal conductivity of amorphous thin-film al-P-O on silicon. Thin Solid Films, 548, 225-229. doi:10.1016/j.tsf.2013.09.085
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  • 548
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  • This work was conducted in part in the Center for Sustainable Research Chemistry supported by the National Science Foundation underCHE-1102637, using the Materials Synthesis and Characterization Facility (MASC) at Oregon State University.
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