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Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition

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  • Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at ϕT ≈ 0.62 and 0.53eV below the conduction band minimum are estimated for Nb₂O₅ and Ta₂O₅, respectively.
  • This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing.
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  • Alimardani, N., McGlone, J. M., Wager, J. F., & Conley Jr, J. F. (2013). Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition. Journal of Vacuum Science & Technology A, 32(1), 01A122. doi:10.1116/1.4843555
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  • 32
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  • 1
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  • The U.S. Army Research Laboratory through W911NF-07-2-0083, The Oregon Nanoscience and Microtechnologies Institute (ONAMI), Grants from the National Science Foundation through DMR-0805372 and CHE-1102637
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