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Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison

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  • A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500°C anneal results in the formation of a ~6 nm thick interfacial SiO₂ layer at the Si interface. This SiO₂ interfacial layer significantly affects the electrical performance of PIC Al₂O₃ films deposited on Si.
  • This is the publisher’s final pdf. The published article is copyrighted by the American Vacuum Society and can be found at: http://scitation.aip.org/content/avs/journal/jvsta.
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  • Smith, S. W., Wang, W., Keszler, D. A., & Conley Jr, J. F. (2014). Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison. Journal of Vacuum Science & Technology A, 32(4), 041501. doi:10.1116/1.4874806
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  • 32
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  • 4
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  • Sean Smith and Wei Wang were supported by the NSF Center for Sustainable Materials Chemistry, grant number CHE-1102637. The TEM instrument used in this work was purchased through the National Science Foundation Major Research Instrumentation (MRI) Program under Grant No. 1040588 with matching funds from the Murdock Charitable Trust and the Oregon Nanoscience and Microtechnologies Institute (ONAMI).
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