Index Catalog // ScholarsArchive@OSU

An eraseable MOS read-only memory

Creator:: Johnson, Norman Leland
Abstract:: A non-volatile electrically alterable read-only memory using an MOS field effect transistor with a threshold voltage which depended upon the position of ionic charges for its memory was fabricated. The conventional silicon dioxide layer was replaced by a composite layer consisting of thermal silicon dioxide, electron beam evaporated aluminum oxide,...
Resource Type:: Dissertation
Full Text:: negative gate bias. 65 LIST OF TABLES Table I Flat-band voltages, metal-semiconductor work functions

Defects and transport properties in In(1-x)Ga(x)As(y)P(1-y) and Ga(1-x)Al(x)As

Creator:: Ku, Joseph W.
Resource Type:: Dissertation
Full Text:: -d fois ATIM-67r1 Dr.STJ.T. Owen The electrical and optical properties of the III-V semiconductor

Growth, fabrication and modeling of pseudomorphic laser diodes

Creator:: Ebner, John
Abstract:: This thesis reports on the crystal growth, fabrication, modeling and performance of Graded Index-Separate Confinement Heterostructure laser diodes which contain pseudomorphic InGaAs as the active region material. Laser epitaxial layers were grown with different indium mole-fractions, and a constant InGaAs layer thickness of 10 nm, on both sides of the...
Resource Type:: Dissertation
Full Text:: , Fabrication and Modeling of Pseudomorphic Laser Diodes I. Introduction Semiconductor injection lasers are

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: aluminum gallium arsenide, AlxGai_xAs, a ternary compound semiconductor. Ternary alloys, such as

Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors

Creator:: Rao, Mulpuri Venkata
Resource Type:: Dissertation
Full Text:: ionization energy (eV) EAA Deep acceptor ionization energy (eV) EF Fermi-energy in semiconductor (eV) EG

Surface recombination velocity and bulk lifetime in GaAs and InP

Creator:: Rastegar, Bahador
Abstract:: An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
Resource Type:: Masters Thesis
Full Text:: ) distribution of excess minority carries. 6 2.2 A p-type semiconductor sample under illumina- tion: (a) top

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Creator:: Rhee, Jin Koo
Abstract:: The electrical and optical properties of semi-insulating, epitaxial and ion-implanted GaAs and InP have been characterized and analyzed. Electron and hole traps in semi-insulating GaAs and InP, with activation energies ΔE[subscript T] ranging from 0.16 ± 0.01 to 0.98 ± 0.01 eV, have been detected and characterized by Photo-Induced Current...
Resource Type:: Dissertation
Full Text:: parameters re- lated to electron trap emission from the depletion region of a metal-n-semiconductor junction

Electrical properties of GaAs FET structures

Creator:: Yang, Fanling Hsu
Abstract:: The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is...
Resource Type:: Dissertation
Full Text:: for his assistance and encouragement. The opportunity to initiate a new semiconductor

Instabilities in InP MIS capacitors

Creator:: Juang, Min Tzuan
Abstract:: The drain current of InP MISPETs is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomenon. In this thesis, variable-temperature bias-stress...
Resource Type:: Masters Thesis
Full Text:: drift velocity. GaAs metal-semiconductor field effect transistor (MESFET) devices have demonstrated

Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs

Creator:: Das, Utpal
Resource Type:: Masters Thesis
Full Text:: carrier 7r Constant (3.142) N N Total number of impurities per unit volume in the semiconductor 4i

ScholarsArchive@OSU

An eraseable MOS read-only memory

Defects and transport properties in In(1-x)Ga(x)As(y)P(1-y) and Ga(1-x)Al(x)As

Growth, fabrication and modeling of pseudomorphic laser diodes

Electrical characterization of n-type aluminum gallium arsenide

Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors

Surface recombination velocity and bulk lifetime in GaAs and InP

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Electrical properties of GaAs FET structures

Instabilities in InP MIS capacitors

Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs

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