Graduate Thesis Or Dissertation
 

Surface recombination velocity and bulk lifetime in GaAs and InP

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  • An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation is different, however, for GaAs and InP than for Si, because of the large optical absorption coefficients and small lifetimes associated with III-V compound semiconductors. A comparison of the computer simulation of the more complex expression and the first order approximation reveals that the first order approximation model is accurate and is equally valid for both n-type and p-type materials.
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