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Large enhancement of nonlinear terahertz absorption in intrinsic GaAs by plasmonic nano antennas

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Abstract
  • We demonstrate remarkably strong nonlinear terahertz (THz) effects in an intrinsic GaAs wafer patterned with a nanometer-width slot antenna array. The antenna near-field reaches 20 MV/cm due to the huge field enhancement in the plasmonic nano-structure (field enhancement factor, α ≅ 50). The THz fields are strong enough to generate high density free carriers (Nₑ > 10¹⁷ cm⁻³) via interband excitations associated with impact ionizations and thus to induce large absorption of the THz radiation (>35%). The nonlinear THz interactions take place in the confined region of nanometer-scale layer adjacent to the antenna.
  • This is the publisher’s final pdf. The published article is copyrighted by the American Institute of Physics Publishing and can be found at: http://scitation.aip.org/content/aip/journal/apl.
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  • Jeong, Y. G., Paul, M. J., Kim, S. H., Yee, K. J., Kim, D. S., & Lee, Y. S. (2013). Large enhancement of nonlinear terahertz absorption in intrinsic GaAs by plasmonic nano antennas. Applied Physics Letters, 103(17), 171109. doi:10.1063/1.4826272
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  • 103
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  • 17
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  • This work was supported by the National Science Foundation (DMR-1063632) and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2008-0061906, 2005-0093838) (GRL, K20815000003).
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