Graduate Thesis Or Dissertation
 

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Public Deposited

Downloadable Content

Download PDF
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/sx61dp90s

Descriptions

Attribute NameValues
Creator
Abstract
  • The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and shows excellent dielectric properties. Hafsox with the addition of lanthanum, to improve film dehydration, has successfully been demonstrated as a gate dielectric. Metal-insulator-metal (MIM) capacitance testing of hafsox with lanthanum, has resulted in a low loss tangent of 0.30% at 1 kHz, a relative permittivity of 11.47 at 1 kHz, a breakdown voltage of 6.30 MV cm⁻¹, and a leakage current density of 4.38 nA cm⁻² at 1 MV cm⁻¹. Progress has also been achieved in the development of solution-based semiconductor materials. To date the most successful of these materials is zinc indium oxide (ZIO), which has been demonstrated as a thin-film-transistor (TFT) channel material. This ZIO TFT is a depletion-mode device with a turn-on-voltage of V[subscript on]~ -19 V, a threshold voltage of V[subscript T] ~-16 V, and a drain current on-to-off ratio of ~10³. Mobilities extracted from this ZIO TFT include an incremental mobility of μ[subscript inc] ~0.05 cm² V⁻' sec⁻', an effective mobility of μ[subscript eff] ~0.02 cm² V⁻' sec⁻', and an average mobility of μ[subscript avg] ~0.02 cm² V⁻' sec⁻' at V[subscript GS]=20 V. The development of metal-semiconductor field-effect transistors (MESFET) TFTs is also investigated as a means of eliminating the need for a dielectric material in order to reduce the complexity of fabricating circuits. MESFETs are attempted with semiconductor materials such as CdS that is deposited by chemical bath deposition (CBD) and SnO₂ that is deposited by RF magnetron sputtering, but with little success. The most successful MESFET-like device fabricated, employing SnO₂ as the channel material, is a strong depletion-mode device with a small amount of gate voltage modulation.
License
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Academic Affiliation
Non-Academic Affiliation
Subject
Rights Statement
Publisher
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome, 24-bit Color) using Capture Perfect 3.0.82 on a Canon DR-9080C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces

Relationships

Parents:

This work has no parents.

In Collection:

Items

Thumbnail Title Date Uploaded Visibility Actions
file details MunseeCraigL2006.pdf 2017-08-08 Public Download