Index Catalog // ScholarsArchive@OSU

Investigation of the Initial Stages of SiGe(001) Dry Thermal Oxidation Using Ambient-Pressure X-ray Photoelectron Spectroscopy

Creator:: Lorona, Shane P.
Abstract:: Ambient-pressure X-ray photoelectron spectroscopy has been used to study the initial stages of dry thermal oxidation of Si₀.₆₀Ge₀.₄₀(001) grown epitaxially on Si(001). Chemical state resolved AP-XPS was performed at temperatures up to 300 ˚C and O₂ pressures up to 1 mbar. Comparisons were made to Si(001) and Ge(001). The Si...
Resource Type:: Masters Thesis
Full Text:: compared to SiO2. Results indicate that the rapid regime oxide growth rate at 300 ˚C was 96 and 65 Å/h

Device Fabrication and Characterization for Biological and Radiation Sensing

Creator:: John, Stebby Varghese
Abstract:: Amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) has revolutionized the display industry enabling smaller pixel sizes and higher refreshing rates than traditional amorphous Si: H TFTs. These attributes of IGZO were leveraged to make a field-effect sensing (FES) platform capable of sensing various biomarkers. The sensitivity and...
Resource Type:: Masters Thesis
Full Text:: rates than traditional amorphous Si: H TFTs. These attributes of IGZO were leveraged to make a field

Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications

Creator:: Rajachidambaram, Jaana Saranya
Abstract:: Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter...
Resource Type:: Masters Thesis
Full Text:: staggered bottom gate structure is employed. F (C F d to a ch h ch igure 1.1: Fo C

Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

Creator:: Motley, Joshua R.
Abstract:: Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back...
Resource Type:: Masters Thesis

Characterization of CoGe Thin Films and Powders

Creator:: Pfau, Andrew James
Abstract:: Cobalt germanides have been widely studied as semiconductor contact materials, but recent theoretical studies suggest that they may also be excellent catalysts for methane steam reforming with stabilities and activities comparable to noble metal catalysts. In order to study the catalytic activity of cobalt germanides, it is critical to first...
Resource Type:: Masters Thesis
Full Text:: collaborative effort with Dr. Gregory S. Herman, Shidong He, J. Trey Diulus, and Gustavo H. Albuquerque. I

Functional materials for advanced energy and electronic devices

Creator:: Flynn, Brendan T.
Abstract:: Advances in energy technologies and electronics have typically occurred through either heightened performance or cost reduction. This dissertation explores both routes through a series of fundamental material studies that may contribute to the enabling of next generation devices. Solution based syntheses and deposition of chemical products offer a low cost...
Resource Type:: Dissertation
Full Text:: are produced by the scattering of incident radiation hνin, molecular excitation to virtual level j

Investigation of oxide semiconductor based thin films : deposition, characterization, functionalization, and electronic applications

Creator:: Rajachidambaram, Meena Suhanya
Abstract:: Nanostructured ZnO films were obtained via thermal oxidation of thin films formed with metallic Zn-nanoparticle dispersions. Commercial zinc nanoparticles used for this work were characterized by microscopic and thermal analysis methods to analyze the Zn-ZnO core shell structure, surface morphology and oxidation characteristics. These dispersions were spin-coated on SiO₂/Si substrates...
Resource Type:: Masters Thesis
Full Text:: = 162nm (a-g) and davg = 234nm (h-n) films that have been spin-coated and annealed between 100-600°C

Processing of nanoscale materials

Creator:: Hostetler, Eric B.
Abstract:: The motivation for undertaking this research was to increase the understanding of processing colloidal semiconductor nanocrystals and thin films metallic glasses to enable their wider application in future devices. This research covered two unique materials, lead selenide (PbSe) nanocrystals and thin film metallic glass alloy of zirconium copper aluminum nickel...
Resource Type:: Masters Thesis
Full Text:: bonding orbital that the electron left can be thought of as a positively charged particle or hole (h

Controlling the Co-Precipitation of Colloidal PbSe Quantum Dots and Their Device Performance in a Diode Architecture

Creator:: McCrea, Tyler D.
Abstract:: In this work, colloidal PbSe quantum dots (QDs) are shown to be synthesized in a controlled manner by changing the growth time and reaction temperature in a microwave synthesis method. It is explained why quantum dots make such a unique material to create electronic devices and the specific benefits that...
Resource Type:: Masters Thesis

Solution-based deposition of functional thin films : development of a glucose biosensor and thermal processing of CZTS nanoparticle films

Creator:: Durgan, Christopher J.
Abstract:: The development of solution-based methods for deposition of different thin film material is presented as an alternative to high cost vacuum-based methods. For certain materials, vacuum techniques are unsuitable for processing. Additionally, vacuum-based processes present high capital costs associated with equipment, and slow processing times. Atmospheric pressure solution based techniques...
Resource Type:: Masters Thesis
Full Text:: is less commonly used [43]. The reaction equation using sulfuric acid is shown below: R-H + H2SO4

ScholarsArchive@OSU

Investigation of the Initial Stages of SiGe(001) Dry Thermal Oxidation Using Ambient-Pressure X-ray Photoelectron Spectroscopy

Device Fabrication and Characterization for Biological and Radiation Sensing

Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications

Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

Characterization of CoGe Thin Films and Powders

Functional materials for advanced energy and electronic devices

Investigation of oxide semiconductor based thin films : deposition, characterization, functionalization, and electronic applications

Processing of nanoscale materials

Controlling the Co-Precipitation of Colloidal PbSe Quantum Dots and Their Device Performance in a Diode Architecture

Solution-based deposition of functional thin films : development of a glucose biosensor and thermal processing of CZTS nanoparticle films

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