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Filtering by: Academic Affiliation Electrical Engineering Date 1963 Date issued sim 1963-08-05

The concentration profile of diffused radio-active antimony in a silicon-dioxide layer

Creator:

Khanna, Satya Pal

Abstract:

The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity concentration in semi-conductor device technology. It is also recognized that the passivation of the silicon surface by the vitreous silicon dioxide envelope protects the underlying...

Resource Type:

Masters Thesis