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Filtering by: Academic Affiliation Electrical Engineering and Computer Science Advisor Conley, John F., jr. Date 2016

Fabrication of Cost-effective Flexible Glucose Sensor for Continuous Glucose Monitoring

Creator:

Mullapudi, Sri Sai Kameswara

Abstract:

Diabetes is a pandemic that affects nearly 29.1 million Americans and the fourth leading cause of mortality in the US. Type 1 diabetes is a chronic condition which occurs due to little to no production of insulin by the pancreas. This form of diabetes requires constant monitoring of blood glucose...

Resource Type:

Masters Thesis
Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Creator:

Klarr, Tyler D.

Abstract:

As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...

Resource Type:

Masters Thesis
Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Creator:

Lin, Shijia

Abstract:

Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...

Resource Type:

Masters Thesis

ScholarsArchive@OSU

Fabrication of Cost-effective Flexible Glucose Sensor for Continuous Glucose Monitoring

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

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