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Creator:: Alimardani, Nasir, McGlone, John M., Wager, John F., and Conley, John F., Jr.
Abstract:: Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
Resource Type:: Article
Full Text:: mechanical tunneling.14–17 Although ALD processes for Nb2O5 or Ta2O5 have been reported, there are no

Creator:: Alimardani, Nasir
Abstract:: Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
Resource Type:: Dissertation
Full Text:: Workshop (IRW) Final Report (2010), pp. 80-84. DOI: 10.1109/IIRW.2010.5706491 7 P. Periasamy, J. J

Creator:: Alimardani, Nasir, King, Sean W., French, Benjamin L., Tan, Cheng, Lampert, Benjamin P., and Conley, John F., Jr.
Abstract:: The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2 O5, ZrO2, HfO2, Al2 O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss...
Resource Type:: Article
Full Text:: deposited via DC magnetron sput- tering using a Zr40Cu35Al15Ni10 metal target with no inten- tional

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