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Filtering by: Alternative title ssim EC 1119 Remove constraint Alternative title ssim: EC 1119 Academic Affiliation Electrical Engineering and Computer Science Remove constraint Academic Affiliation: Electrical Engineering and Computer Science Decade 2010-2019 Remove constraint Decade: 2010-2019

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  • ThreshKnot: Thresholded ProbKnot for Improved RNA Secondary Structure Prediction

    Creator:
    Zhang, Liang
    Abstract:
    RNA structure prediction is a challenging problem, especially with pseudoknots. Recently, there has been a shift from the classical minimum free energy-based methods (MFE) to partition function-based ones that assemble structures based on base-pairing probabilities. Two typical examples of the latter group are the popular maximum expected accuracy (MEA) method...
    Resource Type:
    Masters Thesis
    Full Text:
    ,” Biopolymers, vol. 29, no. 6-7, pp. 1105–1119, 1990. 15. C. B. Do, D. A. Woods, and S. Batzoglou, “CONTRAfold

  • Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

    Creator:
    Triska, Joshua B.
    Abstract:
    Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
    Resource Type:
    Masters Thesis
    Full Text:
    corresponds, ideally, to the transition from flat-band to EC EV EF EC EV EF EC EV EF (a

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    polycrystalline ZnO. EC, EV, and EF are the conduction band minimum, the valence band maximum, and the Fermi

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    and valance bands, as shown in Fig. 2.2(c). EC EF EV Gate Insulator Semiconductor (a) (b

  • A probabilistic framework and algorithms for modeling and analyzing multi-instance data

    Creator:
    Behmardi, Behrouz
    Abstract:
    Multi-instance data, in which each object (e.g., a document) is a collection of instances (e.g., word), are widespread in machine learning, signal processing, computer vision, bioinformatic, music, and social sciences. Existing probabilistic models, e.g., latent Dirichlet allocation (LDA), probabilistic latent semantic indexing (pLSI), and discrete component analysis (DCA), have been...
    Resource Type:
    Dissertation

  • Weak-supervision : Probabilistic Models and Inference

    Creator:
    Pham, Anh
    Abstract:
    In supervised learning, label information can be provided at different levels of granularity. For small datasets, it is possible to acquire a label for each data instance. However, in the big-data regime, this fine granularity approach is prohibitively costly. For example, in semi-supervised learning, only a limited number of samples...
    Resource Type:
    Dissertation

  • Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
    Resource Type:
    Dissertation
    Full Text:
    shown in Fig. 2.2(c). EC EF EV Gate Insulator Semiconductor (a) (b) (c) Gate Insulator