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Creator:: Jenkins, M. A., McGlone, J. M., Wager, J. F., and Conley, J. F., Jr.
Abstract:: The energy barrier heights between two recently reported Ta-based amorphous metals (TaWSi and TaNiSi), TaN, and atomic layer deposited Al2O3 and HfO2 insulators are measured in metal/insulator/metal (MIM) structures with Au top electrodes using internal photoemission (IPE) spectroscopy. For Al2O3, the Ta-based metal barrier heights, phi(Bn), increase with increasing metal...
Resource Type:: Article
Full Text:: : 15 October 2018 . Accepted: 09 January 2019 . Published Online: 01 February 2019 M. A. Jenkins , J

Creator:: Jenkins, Melanie A.
Abstract:: Metal-insulator-metal (MIM) and dual-insulator MIM (MIIM) devices are used in rectennas, hot-electron transistors, single electron transistors, resistive random access memory (RRAM), and capacitors. The performance of these devices relies heavily on the energy barrier height at each metal-insulator interface. Thus, determination of the in-situ electron energy barrier at each interface...
Resource Type:: Dissertation
Full Text:: heights (φB) that arise due to the two different metal work functions (ΦM). Vbi is the difference in the

Creator:: Holden, Konner E. K.
Abstract:: Atomic layer deposition (ALD) is an enabling technique for many new micro- and nanoscale technologies. The self-limiting surface chemical reactions by which ALD fundamentally operates give rise to uniquely high precision (atomic) control over deposited film thickness, uniformity over large areas, and conformality over complex and extreme topographies. One such...
Resource Type:: Dissertation
Full Text:: University assisted with fabrication and testing of Ni:Al2O3 MIM devices in chapter 4. Benjamin M. Kupp

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