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Filtering by: Creator Walters, B. F. Remove constraint Creator: Walters, B. F. Academic Affiliation Electrical Engineering and Computer Science Remove constraint Academic Affiliation: Electrical Engineering and Computer Science

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  • Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

    Creator:
    Triska, Joshua B.
    Abstract:
    Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
    Resource Type:
    Masters Thesis
    Full Text:
    ABSTRACT OF THE THESIS OF Joshua B. Triska for the degree of Master of Science in Electrical and

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    . Title: Electronic Conduction Mechanisms in Insulators Abstract approved: John F. Wager The research

  • 1/f noise of GaAs resistors on semi-insulating substrates, and 1/f noise due to temperature fluctuations in heat conduction

    Creator:
    Choi, Mun-Seork
    Abstract:
    This research work focuses on the mechanism of 1/f noise in GaAs resistors on semi-insulating substrates and 1/f noise due to temperature fluctuations in heat conduction in resistors, diodes, and bipolar transistors. The goal of this research is to generate accurate models to explain physical origin of 1/f noise in...
    Resource Type:
    Dissertation
    Full Text:
    0V # of Cells Threshold voltage of Cells0V ‘C’ ‘D’ ‘E’ ‘F’‘B’‘A’‘3’ ‘4’ ‘5’ ‘6’‘2’‘1’‘0’4 Bits (16

  • Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

    Creator:
    Witsell, Shane Mike’ele Williama
    Abstract:
    Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
    Resource Type:
    Masters Thesis
    Full Text:
    : ______________________________________________________ John F. Conley, Jr. Nucleation in atomic layer deposition (ALD) determines how many cycles

  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    -deposited, (b) 800 ◦C, (c) 900 ◦C, (d) 1000 ◦C, (e) 1100 ◦C anneals, and (f) a reference spectrum of a Ta-W

  • Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

    Creator:
    Alimardani, Nasir
    Abstract:
    Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
    Resource Type:
    Dissertation
    Full Text:
    III, N. Alimardani, C. C. Knutson, J. F. Conley, Jr., D. A. Keszler, B. J. Gibbons, and J. F. Wager

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    Transistors Abstract approved: ______________________________________________________ John F

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    . Abstract approved: John F. Wager Due to a lack of grain boundaries, an amorphous metal thin film (AMTF

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    F. Wager Amorphous oxide semiconductors (AOSs) are of great current interest for thin- film

  • Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

    Creator:
    Lin, Shijia
    Abstract:
    Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
    Resource Type:
    Masters Thesis
    Full Text:
    curves and ηasym vs. V of as-deposited (a, b), air-annealed (c, d) and FG- annealed (e, f) TaN/HfO2/Nb2O5