Typical power outputs of commercially available diode lasers are on the
order of 5 milliwatts. This thesis discusses the growth, processing and
fabrication of high power (lOO's of milliwatts) diode lasers. Devices were
grown by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical
Vapor Deposition (MOCVD). The MOCVD diode...
The purpose of this thesis is to apply the wavelet transform WT to
multiresolution structures for analyzing the information content of images based on
multiresolution signal decomposition of the wavelet representation. The advantage
of the wavelet transform is the fact that it uses different building blocks than the
Fourier's sines...
The awareness of electric power quality has increased over the past decade as electronic equipment
has become more susceptible to power disturbances. The most disruptive power disturbances are voltage
sags and momentary interruptions and their effect on adjustable speed drives (ASDs) is studied in this
thesis.
Several solutions have been...
A new structure for the implementation of bit/serial adaptive IIR filter is
presented. The bit level system consists of gated full adders for the arithmetic
unit and data latches for the data path. This approach allows recursive
operation of the IIR filter to be implemented without any global
interconnections, minimal...
The Brushless Doubly Fed Machine (BDFM) is receiving attention as a candidate for use in adjustable speed drives (ASDs) and variable speed generators (VSGs). With a large percentage of a drive or generator system's cost due to power electronics content, considerable research has been conducted to find drives in which...
The major limiting factor of DRAM access time is the low transconductance of the
MOSFET's which have only limited current drive capability. The bipolar junction
transistor(BJT) has a collector current amplification factor, β, times base current and is
limited mostly by the willingness to supply this base current. This collector...
The low thermal conductivity of gallium arsenide compared to silicon
results in self-heating effects in GaAs MESFETs that limit the electrical
performance of such devices for high power applications. To date, analytical
thermal models of self heating in GaAs MESFETs are based on the assumption
of a uniformly heated channel....
A numerical technique to compute the time domain response of multiconductor lossy
uniform and nonuniform lines terminated in general nonlinear elements is presented. The
technique is based on the generalized method of characteristics. The method transforms the
original system of transmission line equations into a system of ordinary differential
equations....
A numerical method based on the the method of characteristics for hyperbolic systems
of partial differential equations in four independent variables is developed and used
for solving time domain Maxwell's equations. The method uses the characteristic
hypersurfaces and the characteristic conditions to derive a set of independent equations
relating the...