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State space modeling of alternating-current thin-film electroluminescent devices

Creator:: Peery, Jeffrey B.
Resource Type:: Masters Thesis
Full Text:: maximum interface state density Nssmax. Nssmax has values of 5 x 1012, 1013, 5 x 1013, 1014, and 5

Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors

Creator:: Rao, Mulpuri Venkata
Resource Type:: Dissertation
Full Text:: , the energy separation of the Fermi level relative to the conduction band edge, EC EF, is 0.298 eV

Hot electron effects in N-channel MOSFET's

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: -carrier mechanisms on LDD MOSFET's N-POLY Si 01 OXIDE AVALANCHE INJECTION Et Ec ( Ef ) t 0 as P

Radiation effects in III-V compound semiconductor heterostructure devices

Creator:: Li, ChyiShiun
Abstract:: The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
Resource Type:: Masters Thesis
Full Text:: HBTs before irradiation and after 3.0 x 1012 p/cm2 proton irradiation..... 68 4.3 The common emitter

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: (H z) N oi se sp ec tru m of in te gr at ed G aA s de pl et io n m od e M ES FE Ts 1

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Creator:: Rhee, Jin Koo
Abstract:: The electrical and optical properties of semi-insulating, epitaxial and ion-implanted GaAs and InP have been characterized and analyzed. Electron and hole traps in semi-insulating GaAs and InP, with activation energies ΔE[subscript T] ranging from 0.16 ± 0.01 to 0.98 ± 0.01 eV, have been detected and characterized by Photo-Induced Current...
Resource Type:: Dissertation
Full Text:: (c) t = 0+ + 0 0 + 0 0 + + 0 0 + + 0 + + + + + + Ec EF 0 0 0 0 0 ET Ev X .10 Figure

Modified conjugate gradient method for ADSL echo cancellation

Creator:: Inoue, Takao
Abstract:: In recent years, high speed data communications over twisted pair cables has gained tremendous demand. Asymmetric Digital Subscriber Line (ADSL) was standardized for use over twisted pair cables. A critical component in ADSL system is the echo canceller which is intended to discriminate unwanted echo signals caused by twisted pair...
Resource Type:: Masters Thesis
Full Text:: Usage of EC System 18 2.10 FDM and EC System Architectural Difference 19 2.11 Asynchronous Timing

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:: Prasad, S. Jayasimha
Resource Type:: Dissertation
Full Text:: capture cross-section Ec energy of the conduction band edge Eco energy of the conduction band edge at

Modeling and characterization of hemt devices

Creator:: Chang, Chujyh
Abstract:: Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
Resource Type:: Masters Thesis
Full Text:: as shown in Fig. 2.5. Mathematically v =1.tE , E < Ec (2.27.a) v = vs , E > Ec (2.27.b) 21

A parametric analysis of the capabilities of undersea acoustic imaging

Creator:: Calligan, C. C.
Abstract:: The feasibility of utilizing acoustic imaging techniques for improving the undersea viewing capability of small submersibles is investigated. The limiting values of major parameters in acoustic imaging systems are established and graphs which illustrate the parametric relationships are presented. A series of sample calculations illustrate how the graphs can be...
Resource Type:: Masters Thesis
Full Text:: db re 1 dyne/cm2 at 1 yard. 0. 1 4= - O O L in ea r D im en si on o f O bj ec t ( fe

ScholarsArchive@OSU

State space modeling of alternating-current thin-film electroluminescent devices

Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors

Hot electron effects in N-channel MOSFET's

Radiation effects in III-V compound semiconductor heterostructure devices

Noise measurements, models and analysis in GaAs MESFETs circuit design

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Modified conjugate gradient method for ADSL echo cancellation

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Modeling and characterization of hemt devices

A parametric analysis of the capabilities of undersea acoustic imaging

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