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Filtering by: Academic Affiliation Electrical and Electronics Engineering Remove constraint Academic Affiliation: Electrical and Electronics Engineering Advisor Looney, James C. Remove constraint Advisor: Looney, James C. Decade 1960-1969 Remove constraint Decade: 1960-1969

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  • Reactively sputtered films of silicon nitride for diffusion masking

    Creator:
    Delzer, Dennis Richard
    Abstract:
    The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also...
    Resource Type:
    Masters Thesis

  • Deterioration of gallium arsenide diodes

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    Changes in the diode characteristics of three different types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters in which measurable changes were observed were the forward resistance, the reverse breakdown voltage, the forward "knee" of the diode curve and the constant of proportionality relating the...
    Resource Type:
    Masters Thesis

  • Circuit characterization for efficient computer analysis

    Creator:
    Magnuson, Waldo George
    Abstract:
    Analysis, coupled with an experimental investigation, is an important step in the design process of electronic circuits. Fortunately, with the development of computer programs to perform general network analysis, the job of analyzing relatively complex networks is not as formidable as it once was. This investigation develops guidelines for efficiently...
    Resource Type:
    Dissertation

  • Vacuum deposition of silicon monoxide for capacitors

    Creator:
    Lo, Joseph Ping Kwan
    Abstract:
    The experimental procedure for evaporating silicon monoxide together with the methods for measuring the film thickness have been investigated. The effects of various process parameters on the rate of deposition, such as source temperature and source-substrate distance, have been studied. The uniformity of silicon monoxide films deposited by this particular...
    Resource Type:
    Masters Thesis

  • Determination of sub-nanogram quantities of boron by diffusion in silicon

    Creator:
    Khanna, Satya Pal
    Abstract:
    A technique was investigated in which a silicon crystal was used as a very sensitive detector of sub-nanogram quantities of boron. The unknown quantity of boron was spread uniformly on the surface of an n-type silicon wafer which was then baked for diffusion. The measured depth of the p-n junction...
    Resource Type:
    Dissertation

  • Thin-film wideband tunnel-diode amplifier

    Creator:
    Hsieh, Edmund Jui-ching
    Abstract:
    Wideband tunnel-diode amplifiers using common-base transistor stages for isolation were investigated for stability criteria, frequency response, and the effects of temperature and voltage supply fluctuations. For the first time the full frequency spectrum of a tunnel-diode, from d-c to the gigahertz (GHz) range, was able to be utilized in an...
    Resource Type:
    Dissertation

  • Impedance bridge balancing using perturbation theory

    Creator:
    Sternes, Kenneth James
    Abstract:
    This paper describes a technique for separating the two signal voltages which are necessary for balancing an ac impedance bridge from its detector output voltage. The technique is unique in that the necessary information is derived from modulations on the generator voltage. These modulations are formed by perturbing the variable...
    Resource Type:
    Masters Thesis

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation

  • Percussive-welded p-n junctions in silicon

    Creator:
    Tao, David Ming-Shih
    Abstract:
    This thesis investigates a way to fabricate P-N junctions by percussive welding. The theoretical basis of percussive welding, design considerations of the apparatus used, and the electrical characteristics of the junctions were the main objectives of this investigation. P-type silicon wafers and gold wire doped with arsenic as a N-type...
    Resource Type:
    Masters Thesis

  • Compatible field-effect and bipolar transistors

    Creator:
    Cheung, David Kin-Poon
    Abstract:
    Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a single diffusion. This was accomplished by the techniques of (1) partial masking, (2) two depositions, (3) etched channels, and (4) oxide depletion. The first three...
    Resource Type:
    Masters Thesis