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Filtering by: Creator Ohm, Robin A. Remove constraint Creator: Ohm, Robin A. Academic Affiliation Electrical and Electronics Engineering Remove constraint Academic Affiliation: Electrical and Electronics Engineering

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  • Microstrips on gold-doped silicon substrates

    Creator:
    Lai, Cheng-wen
    Abstract:
    The power dissipation of microstrip transmission-line on gold-doped silicon substrates was investigated. The gold-doping was applied to a regular n-type silicon substrate with resistivity of 5 to 10 ohm-cm. Insertion-loss tests were employed to measure the power dissipation of the microstrips. Power dissipation somewhat less than that for intrinsic silicon...
    Resource Type:
    Masters Thesis
    Full Text:
    raised to as high as 105 ohm-cm after gold doping. Therefore, it is possible to obtain a low-loss

  • Influence of surface fields on shallow planar-junction breakdown voltages

    Creator:
    Kim, Sŭng-yŏng
    Abstract:
    The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also...
    Resource Type:
    Masters Thesis
    Full Text:
    higher for a circular diode by 3% for 1 ohm-cm and 6% for 5 ohm-cm substrates. For a high-voltage

  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    - cated on one ohm-cm n-type (111) silicon wafers. Auto- matic display and plotting equipment were used

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    of 6x10 -3 ohm -cm to 0.01 ohm -cm material had very high resistivities. To lower film resistivity

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    of a 10 ohm-cm. n-type silicon wafer, with (111) crystal orien- tation. The pyrolytic SiO2 process

  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
    Full Text:
    A MOS-transistor with submicron, and graded channel AN

  • A circuit design to generate and maintain a constant magnetic flux

    Creator:
    Tuntawiroon, Chalermchai
    Abstract:
    A circuit designed to generate and maintain a constant magnetic flux is presented by using a sample-data control system, instead of a continuous control system. A Hall generator is used as the magnetic sensing element, and is operated with a pulse bias to allow a large output. The output of...
    Resource Type:
    Masters Thesis
    Full Text:
    system is terminated by a resistance of 300 K ohm, which 101(nStrobe Pulse 12V Idc = OmA I 20pf

  • The high frequency performance of a Schottky diode detector

    Creator:
    Crane, Albert Sears
    Abstract:
    This paper analyzes the theory and performance of a Schottky barrier diode detector used over a frequency range extending from a few kilohertz into the gigahertz region. The process of large signal rectification is analyzed with the simplified detector circuit. Phenomena which can affect the rectification process at high frequencies,...
    Resource Type:
    Masters Thesis
    Full Text:
    package is placed between the center conductor and the outer wall of a 50 ohm coaxial line. The glass

  • Analysis of the D. C. electric field for a pipeline in a three layered earth

    Creator:
    Brandenstein, Albert Edward
    Abstract:
    This paper develops an equation, from an heuristic set of assumptions, which describes the axial current, leakage current, resultant electric field, and resultant earth potential occurring when a pipeline buried within a resistive earth is subjected to a distributed, primary, axial, electrostatic field produced from a high-voltage, direct-current (HVDC) power...
    Resource Type:
    Dissertation
    Full Text:
    Analysis of the D. C. electric field for a pipeline in a

  • A study of resistance modulation by carrier injection

    Creator:
    Leung, Danny Chor-sing
    Abstract:
    A design of a current-controlled variable resistor was attempted. It is a four-terminal device with two junctions, one of which serves as carrier injector to increase the carrier concentration in the bulk of a gold-doped silicon substrate. Then resistance of the bulk can be varied with different levels of injection....
    Resource Type:
    Masters Thesis
    Full Text:
    about 2.7 ohm-cm. The chip was then put into a furnace at 1100°C to diffuse gold into the silicon. The