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Filtering by: Subject Transistors Remove constraint Subject: Transistors Academic Affiliation Electrical and Electronics Engineering Remove constraint Academic Affiliation: Electrical and Electronics Engineering

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  • Compatible field-effect and bipolar transistors

    Creator:
    Cheung, David Kin-Poon
    Abstract:
    Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a single diffusion. This was accomplished by the techniques of (1) partial masking, (2) two depositions, (3) etched channels, and (4) oxide depletion. The first three...
    Resource Type:
    Masters Thesis
    Full Text:
    predictability. The field-effect transistor parameters obtained were comparable for all three methods

  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
    Full Text:
    A MOS-transistor with submicron, and graded channel AN

  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    of an MOS Transistor. 8 5. Typical Current-Voltage Characteristics of the MOS Transistor 9 6

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    The MOS tetrode transistor AN ABSTRACT OF THE THESIS OF

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
    Full Text:
    transistor (W-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of

  • Characteristics of analog switches using junction field-effect transistors

    Creator:
    Jomeswarng, Paichitr
    Abstract:
    The junction-field effect transistor has been improved technically, so it is appropriate in analog switching applications. In this paper, use of a junction FET as an analog switch is described. Feedthrough of current from the gate control voltage causes a noise at the output during the switching transient. Peak noise...
    Resource Type:
    Masters Thesis
    Full Text:
    Donald L. Amort The junction -field effect transistor has been improved techni- cally, so it is

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
    Full Text:
    Transistor 109 MOS Transistor Fabrication 111 MOS Transistor Evaluation 115 Bias-Temperature Tests 120

  • Field-effect transistor noise at low temperatures

    Creator:
    Spaulding, Richard Alan
    Abstract:
    Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K...
    Resource Type:
    Masters Thesis
    Full Text:
    Field-effect transistor noise at low temperatures AN

  • Influence of surface fields on shallow planar-junction breakdown voltages

    Creator:
    Kim, Sŭng-yŏng
    Abstract:
    The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also...
    Resource Type:
    Masters Thesis
    Full Text:
    the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate

  • A MOSFET integrated circuit shift register

    Creator:
    Chen, David Wei
    Abstract:
    This paper is concerned with the design of a 21-bit metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three separate 1, 4, and 16-bit static shift registers constructed on a single monolithic chip, each with independent input and output terminals. Type D flip-flops are used...
    Resource Type:
    Masters Thesis
    Full Text:
    -effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three