Index Catalog // ScholarsArchive@OSU

Creator:: Lee, Yun-Shik, Amer, N., and Hurlbut, Walter C.
Abstract:: We demonstrate a technique for terahertz pulse shaping via optical rectification in the pre-engineered domain structure of poled lithium niobate crystals. The terahertz wave forms coincide with the crystal domain structures. The one-dimensional nonlinear wave equation simulates the experimental results with a good qualitative agreement.
Resource Type:: Article

Creator:: Amer, N., Hurlbut, Walter C., Norton, B. J., Lee, Yun-Shik, and Norris, T. B.
Abstract:: We employ two different methods to generate controllable elliptical polarization of teraherz (THz) pulses. First, THz pulses are generated via optical rectification in nonlinear crystals using a pair of temporally separated and perpendicularly polarized optical pulses. The THz ellipticity is controlled by adjusting the relative time delay and polarization of...
Resource Type:: Article

Creator:: Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Lee, Yun-Shik, Hurlbut, Walter C., Kozlov, V. G., Bliss, D., and Lynch, C.
Abstract:: The authors demonstrate an efficient room temperature source of terahertz radiation using femtosecond laser pulses as a pump and GaAs structures with periodically inverted crystalline orientation, such as diffusion-bonded stacked GaAs and epitaxially grown orientation-patterned GaAs, as a nonlinear optical medium. By changing the GaAs orientation-reversal period (504–1277 μm), or...
Resource Type:: Article

Creator:: Lee, Yun-Shik, Hurlbut, Walter C., Vodopyanov, K. L, Fejer, M. M., and Kozlov, V. G.
Abstract:: The authors demonstrate the generation of multicycle narrow-bandwidth terahertz pulses in periodically inverted GaAs structures using optical rectification of 2 μm, 100 fs pump pulses. Three different types of orientation-inverted samples are employed: optically contacted multilayer, orientation-patterned, and diffusion-bonded GaAs. The terahertz pulses are characterized by two-color (pump at 2...
Resource Type:: Article

Creator:: Hurlbut, Walter C.
Abstract:: Gallium arsenide shows excellent promise for terahertz generation using mid infrared. This is for two reasons. First, the indices of refraction for the terahertz (nTHz=3.61 at 1 THz) and mid infrared (nopt=3.431 at 2 μm) are close allowing a long interaction length. Second, the linear absorption is low at terahertz...
Resource Type:: Dissertation

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