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Filtering by: Academic Affiliation Physics Creator Keszler, Douglas A. Decade 2000-2009

Valence band structure of BaCuSF and BaCuSeF

Creator:

Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, Keszler, Douglas A., Hirano, Masahiro, and Hosono, Hideo

Abstract:

The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals,...

Resource Type:

Article
High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition

Creator:

Newhouse, Paul F., Park, C.-H., Keszler, Douglas A., Tate, J., Nyholm, P. S., and Tate, Janet

Abstract:

High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03....

Resource Type:

Article
p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)

Creator:

Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, and Keszler, Douglas A.

Abstract:

BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively,...

Resource Type:

Article