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Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Barati, Alireza, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
Resource Type:: Article

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Hein, Corinna, Mayer, Thomas, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...
Resource Type:: Article

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, Keszler, Douglas A., Hirano, Masahiro, and Hosono, Hideo
Abstract:: The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals,...
Resource Type:: Article

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