Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are
investigated as a channel layers for transparent thin-film transistors (TTFTs).
Films are deposited on glass for characterization, and transistor channel layers are
deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass
substrates (ATO/ITO/glass) to produce TTFTs.
UV-visible spectroscopy on...
The Brain Research through Advanced Innovative Neurotechnologies (BRAIN) initiative seeks to understand how ensembles of neurons create neural networks. The initiative has spurred the pursuit of developing novel experimental tools for investigating how individual neurons propagate electrical signals (action potentials) to produce ensemble behavior. Classical techniques to measure the internal...
Low-dimensional electronic materials offer a platform to observe biological processes with unprecedented spatial and temporal resolution. Carbon nanotubes (CNTs) are the closest physical analog to an ideal 1D system and can be scaled and integrated into multiplexed electronic circuitry. The molecular structure of a CNT is also biocompatible, making them...
Detection of biomolecules is important for the diagnosis and treatment of diseases. Low concentration detection, specific biomolecule detection, and point-of-care use are appealing characteristics for biosensors because of the possibility of early detection and quick results of specific biomolecules. Furthermore, inexpensive biosensors are appealing so that they are accessible to...
Carbon Nanotubes are a unique family of nanostructures that have shown remarkable promise for mechanical, electrical, and optical applications. Fundamentally similar to the earlier discovered Buckminsterfullerene (C₆₀), carbon nanotubes are hollow cylinders formed from a single sheet of carbon atoms. The research presented in this dissertation investigates several carbon nanotube...
The electron, gamma and neutron radiation degradation of III-V semiconductors
and heterojunction bipolar transistors (HBTs) is investigated in this thesis.
Particular attention is paid to InP and InGaAs materials and InP/InGaAs
abrupt single HBTs (SHBTs). Complete process sequences for fabrication of
InP/InGaAs HBTs are developed and subsequently employed to produce...
The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...