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Filtering by: Subject Metal oxide semiconductor field-effect transistors Advisor Allstot, David J. Decade 1980-1989

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Creator:

Lam, Steven C. F.

Abstract:

The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...

Resource Type:

Masters Thesis

Full Text:

motion within a semiconductor crystal. For a long channel device, low field mobility serves as the
Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

Creator:

Or, Pee-Keong

Abstract:

The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...

Resource Type:

Masters Thesis

Full Text:

]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs