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Filtering by: Subject Metal oxide semiconductor field-effect transistors Remove constraint Subject: Metal oxide semiconductor field-effect transistors Advisor Allstot, David J. Remove constraint Advisor: Allstot, David J.

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  • CMOS low noise amplifier design utilizing monolithic transformers

    Creator:
    Zhou, Jianjun J.
    Abstract:
    Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
    Resource Type:
    Dissertation
    Full Text:
    is low and the gate oxide thickness is small [21]. When the bulk effect can be completely ignored

  • Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

    Creator:
    Lam, Steven C. F.
    Abstract:
    The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
    Resource Type:
    Masters Thesis
    Full Text:
    motion within a semiconductor crystal. For a long channel device, low field mobility serves as the

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    ]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    -semiconductor field effect transistor (MESFET) technology by deviations of the semi- insulating substrate