Index Catalog // ScholarsArchive@OSU

Creator:: Murali, Santosh
Abstract:: Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the...
Resource Type:: Masters Thesis

Creator:: Triska, Joshua B.
Abstract:: Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
Resource Type:: Masters Thesis

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: plasma by Lee et al.53 Si has also been obtained by ALD with precursors such as SiCl4 and Si2H654

Creator:: Mason, Ashley D.
Abstract:: ZnO nanowires (NWs) are good candidates for chemical sensing because of their high surface-to-volume ratio. In this work, ZnO nanobridge sensors were fabricated utilizing a novel method which uses carbonized photoresist (C-PR) as a nucleation layer. The use of C-PR allows simultaneous growth and integration of NWs to lithographically-defined features....
Resource Type:: Masters Thesis

Creator:: Pelatt, Brian D.
Abstract:: Interest in nanomaterials is motivated partly by their potential for sensor arrays to detect different gases. Nanowires in particular are of interest because their high surface-to-volume ratio promises the possibility of high sensitivity. However, because of their discrete quasi-one-dimensional geometry, electrical integration of nanowires into photolithographically defined devices and circuits...
Resource Type:: Masters Thesis

Creator:: Klarr, Tyler D.
Abstract:: As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Resource Type:: Masters Thesis

ScholarsArchive@OSU