Index Catalog // ScholarsArchive@OSU

Ultra low capacitance RFIC probe

Creator:: Jacob, Michael E.
Abstract:: In Radio Frequency Integrated Circuits (RFIC) or high frequency digital ICs, there is a demand to probe the internal nodes for testing. The ultra low capacitance RFIC probe presented in his work is a flexible tool for these applications. The probe utilizes the coupling between a tungsten needle and the...
Resource Type:: Masters Thesis
Full Text:: frequency response of 6GHz [3]. Input impedance is 20k Ohm with a loading capacitance of ~500fF. High

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Creator:: Lee, Mankoo
Abstract:: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
Resource Type:: Dissertation
Full Text:: ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

Suppression of substrate noise in a mixed-signal CMOS integrated circuit

Creator:: Lim, Wei Tjan (Richard)
Abstract:: Substrate switching noise is becoming a concern as integrated circuits get larger and speeds get faster. Mixed-mode integrated circuits are especially affected as the substrate noise interferes with sensitive analog circuits resulting in limited signal to noise ratios. This thesis serves to study the cause of the noise at the...
Resource Type:: Masters Thesis
Full Text:: 1 ohm Fig. 2.1: Noise Coupling possibilities in a Mixed-Signal Integrated Circuit Digital

Electrical characterization of silicon and silicon dioxide materials

Creator:: Sze, Wing-Il
Abstract:: The major goal of this research work was to develop better electrical measurements for the evaluation of silicon material quality. The first approach investigated was the Zerbst generation lifetime measurement technique. It was demonstrated that the error in the estimation of the generation lifetime obtained with this technique could be...
Resource Type:: Dissertation
Full Text:: surface generation effects. A procedure was developed to evaluate the generation lifetimes accurately

Hot electron effects in N-channel MOSFET's

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: AC stress. 0 11 devices, taking special care to reduce ringing in the circuits by using a 50 ohm

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Creator:: Cheng, Mark
Abstract:: This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
Resource Type:: Masters Thesis
Full Text:: a 5-nm p-MOS transistor with Rload = 100 ohm, Vds = 1 1.3V and Ids = 1.53mA in the saturation

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: in GaAs MESFETs. The goal of this research is to attain a more accurate noise model for GaAs MESFETs

DLTS characterization of precipitation induced microdefects

Creator:: Whitwer, Fredrick D.
Resource Type:: Masters Thesis
Full Text:: silicon wafers were subjected to a two step heat treatment to nucleate and grow oxide precipitates. The

Wide bandwidth GaAs MESFET amplifier

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Masters Thesis
Full Text:: 830 Figure 3.8 Class A Output Stage 829 Vout 831 B28 adjusted to be as close to 50 ohm as

Timing jitter and phase noise in electronic oscillators

Creator:: Zhang, Chengwei
Abstract:: In the first part of this dissertation, low frequency l/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. This noise phenomenon is not described by...
Resource Type:: Dissertation
Full Text:: , we have developed a large signal non- linear transient simulation technique to simulate phase noise

Comparison and analysis of jitter in CMOS ring oscillators

Creator:: Natesan, Peroly
Abstract:: A comparison and analysis of jitter for five different architectures of ring oscillators using a novel simulation technique developed by Professor Forbes' group is presented. Ring oscillators have become an essential building block in many digital and synchronous communications system due to their integrated nature and are widely used in...
Resource Type:: Masters Thesis
Full Text:: · redacted for privacy. ;;--7 .. I b (-./ LeenardForbes A comparison and analysis of jitter for five

1/f noise of GaAs resistors on semi-insulating substrates, and 1/f noise due to temperature fluctuations in heat conduction

Creator:: Choi, Mun-Seork
Abstract:: This research work focuses on the mechanism of 1/f noise in GaAs resistors on semi-insulating substrates and 1/f noise due to temperature fluctuations in heat conduction in resistors, diodes, and bipolar transistors. The goal of this research is to generate accurate models to explain physical origin of 1/f noise in...
Resource Type:: Dissertation
Full Text:: based on a distributed equivalent circuit representation of the substrate, and shows that 1/f noise

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:: Haddad, Homayoon
Resource Type:: Dissertation
Full Text:: approved. Leonard Forbes Material defect characterization has proved to be a valuable tool in today's

Physical mechanisms, device models, and lifetime projections of hot-carrier effects in CMOS transistors

Creator:: Hwang, Nam
Resource Type:: Dissertation
Full Text:: projections, circuit analysis, and reliability improvement techniques. A spectral analysis of oxide trap

ScholarsArchive@OSU

Ultra low capacitance RFIC probe

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Suppression of substrate noise in a mixed-signal CMOS integrated circuit

Electrical characterization of silicon and silicon dioxide materials

Hot electron effects in N-channel MOSFET's

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Noise measurements, models and analysis in GaAs MESFETs circuit design

DLTS characterization of precipitation induced microdefects

Wide bandwidth GaAs MESFET amplifier

Timing jitter and phase noise in electronic oscillators

Comparison and analysis of jitter in CMOS ring oscillators

1/f noise of GaAs resistors on semi-insulating substrates, and 1/f noise due to temperature fluctuations in heat conduction

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Physical mechanisms, device models, and lifetime projections of hot-carrier effects in CMOS transistors

Limit your search

Academic Affiliation

Advisor

Commencement Year

Committee Member

Creator

Date

Decade

Degree Field

Degree Level

Degree Name

Language

License

Non-Academic Affiliation

Peer Reviewed

Resource Type

Rights Statement

Subject

Search Constraints

Search Results

Limit your search