The purpose of this work is to develop a new model for LDD
n-MOSFET degradation in drain current under long-term AC use
conditions for lifetime projection which includes a self-limiting
effect in the hot-electron induced device degradation.
Experimental results on LDD n-channel MOSFETs shows that the
maximum drain current degradation...
Reliability of sub-micron analog circuits is directly related to impact ionization and
the subsequent changes in threshold voltage and drain current of n-MOSFET devices.
This thesis presents theory of the hot-electron effects on the device characteristics and
circuit performance, explores several approaches to improve performance at both the
device and...