Index Catalog // ScholarsArchive@OSU

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Creator:: Cheng, Mark
Abstract:: This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
Resource Type:: Masters Thesis
Full Text:: .................. 13 transistor 2.5 Measured and simulated DC characteristics of (5, 0,6, 1.2) p.m PMOS .......... 14

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:: Haddad, Homayoon
Resource Type:: Dissertation
Full Text:: submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new

Experimental verification of a new model for bipolar transistor flicker noise

Creator:: Li, Ling
Abstract:: Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the fluctuation in base surface recombination and the fluctuation in the mobility or diffusivity of free charge carriers. Our experiments were done to verify a newly...
Resource Type:: Masters Thesis
Full Text:: transistor flicker noise AN ABSTRACT OF THE THESIS OF Ling Li for the degree of Master of Science in

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Creator:: Lee, Mankoo
Abstract:: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
Resource Type:: Dissertation
Full Text:: ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

Hot electron effects in N-channel MOSFET's

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: reliability of MOS transistor devices can be significantly improved [7]. This part presents new results based

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: (x, y) where Q(0,0)=1 if the transistor is operating in the linear range, and Q(0,1)=1/2 for a

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Creator:: Zhou, Junlin, 1973-
Resource Type:: Masters Thesis
Full Text:: transistor flicker noise; HSPICE with level 47 or level 49 and NLEV = 2&3, and PSPICE with level 6 and NLEV

Wide bandwidth GaAs MESFET amplifier

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Masters Thesis
Full Text:: try achieve zero offset set voltage at the output. The transistor B31 is present to achieve symmetry

Reliability and hot-electron effects in analog and mixed-mode circuits

Creator:: Ge, David Ying
Abstract:: Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
Resource Type:: Masters Thesis
Full Text:: of the liim n-substrate metal-oxide semiconductor field effect transistor, MOSFET, in analog and

Ultra low voltage DRAM current sense amplifier with body bias techniques

Creator:: Gang, Yung-jin, 1957-
Abstract:: The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
Resource Type:: Dissertation
Full Text:: have only limited current drive capability. The bipolar junction transistor(BJT) has a collector

ScholarsArchive@OSU

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Experimental verification of a new model for bipolar transistor flicker noise

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Hot electron effects in N-channel MOSFET's

Noise measurements, models and analysis in GaAs MESFETs circuit design

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Wide bandwidth GaAs MESFET amplifier

Reliability and hot-electron effects in analog and mixed-mode circuits

Ultra low voltage DRAM current sense amplifier with body bias techniques

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